IPT017N12NM6ATMA1 vs IQE220N15NM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT017N12NM6ATMA1 disebabkan oleh Infineon dan IQE220N15NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPT017N12NM6ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 5, Source-Down |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 150 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| Kemasan | PG-HSOF-8 (TOLL) | PG-WHTFN-9 (Source-Down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Kiraan Pin | 8 + tab | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |