IPT017N12NM6ATMA1 vs IQE220N15NM5CGSCATMA1 比較
詳細並排比較 IPT017N12NM6ATMA1 由 Infineon 與 IQE220N15NM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT017N12NM6ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | — |
| Technology | OptiMOS 6 | OptiMOS 5, Source-Down |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | 150 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 331 A | — |
| On-Resistance RDS(on) max | 1.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 395 W | — |
| 封裝 | PG-HSOF-8 (TOLL) | PG-WHTFN-9 (Source-Down) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C | — |
| 腳位數 | 8 + tab | — |
| Packaging | Tape & Reel | — |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| 工作溫度範圍 | — | -55C to +150C (junction) |