IPT022N10NF2SATMA1 vs IGLR70R270D2SXUMA1 Perbandingan
Perbandingan bersamaan detil IPT022N10NF2SATMA1 dari Infineon dan IGLR70R270D2SXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
IPT022N10NF2SATMA1 ✓ AktifInfineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT022N10NF2SATMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | CoolGaN™ G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| Paket | PG-HSOF-8-10 (8 leads + tab) | PG-TSON-8-8 (ThinPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Rentang Suhu Kerja | -55C to +175C | -40C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |