IPT022N10NF2SATMA1 vs IGLR70R270D2SXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT022N10NF2SATMA1 sa pamamagitan ng Infineon at IGLR70R270D2SXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
IPT022N10NF2SATMA1 ✓ NakahandaInfineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT022N10NF2SATMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | CoolGaN™ G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| Packhaging | PG-HSOF-8-10 (8 leads + tab) | PG-TSON-8-8 (ThinPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Hanay ng Temperature na Operasyon | -55C to +175C | -40C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 7.3 A |
| Power Dissipation (PD, Tc) | — | 28 W |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |