IPTC054N15NM5ATMA1 vs IQE220N15NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IPTC054N15NM5ATMA1 dari Infineon dan IQE220N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPTC054N15NM5ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25°C | 17.5 A | — |
| Continuous Drain Current (ID) at TC=25°C | 143 A | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 250 W | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΩ | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) typical | 58 nC | — |
| Forward Body Diode Voltage (VSD) | 0.83 V | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TSON-8-5 (Source-Down) |
| Tipe Mounting | Surface Mount (top-side cooled) | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Konfigurasi Output | — | Single N-Channel |
| Suhu Kerja | — | -55C to +150C (junction) |
| Technology | — | Trench MOSFET (OptiMOS 5) |