IPTC054N15NM5ATMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IPTC054N15NM5ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPTC054N15NM5ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IPT family) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TA=25°C 17.5 A —
Continuous Drain Current (ID) at TC=25°C 143 A —
Power Dissipation (PD) at TA=25°C 3.8 W —
Power Dissipation (PD) at TC=25°C 250 W —
On-Resistance RDS(on) at VGS=10V, ID=50A 5.4 mΩ —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) typical 58 nC —
Forward Body Diode Voltage (VSD) 0.83 V —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-HDSOP-16-2 (16-pin top-cooled) PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting Surface Mount (top-side cooled) Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Rentang Suhu Kerja — -55 C to +175 C
Technology — Trench MOSFET (OptiMOS 5)
MSL (Moisture Sensitivity Level) — 1

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