IPW60R037P7XKSA1 vs IPP037N08N3GXKSA1 Perbandingan
Perbandingan bersamaan detil IPW60R037P7XKSA1 dari Infineon dan IPP037N08N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R037P7XKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ P7 | — |
| Tipe Transistor | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Paket | PG-TO247-3 (TO-247-3, through-hole) | PG-TO220-3 (Through Hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Suhu Hubung Kerja | -55 °C to +150 °C | — |
| Technology | CoolMOS Superjunction (SJ) | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Jumlah Pin | — | 3 |
| Rentang Suhu Kerja | — | -55°C to +175°C (junction) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |