IQD009N06NM5SCATMA1 vs IQEH50NE2LM7ZCGATMA1 Perbandingan

Perbandingan bersamaan detil IQD009N06NM5SCATMA1 dari Infineon dan IQEH50NE2LM7ZCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD009N06NM5SCATMA1 IQEH50NE2LM7ZCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 333 W 150 W
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Paket PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TTFN-9-3
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] -55 degrees C to +175 degrees C
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL classification] —
Tape and Reel Packaging Yes (suffix SCATMA1) —
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Maximum Junction Temperature — +175 degrees C
Technology — OptiMOS 7 (Trench-Gate)
Qualification — Industrial grade per Infineon datasheet

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