IQD009N06NM5SCATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of IQD009N06NM5SCATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD009N06NM5SCATMA1
IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon
IQD009N06NM5SCATMA1 β ActiveInfineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | IQD009N06NM5SCATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Ta=25C) | 42 A | β |
| Pulsed Drain Current (IDM, Tc) | 445 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 150 W |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Package | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55 degrees C to +175 degrees C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL classification] | β |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Maximum Junction Temperature | β | +175 degrees C |
| Technology | β | OptiMOS 7 (Trench-Gate) |
| Qualification | β | Industrial grade per Infineon datasheet |