IQD009N06NM5SCATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison

Detailed side-by-side comparison of IQD009N06NM5SCATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Active

Specification Comparison

Parameter IQD009N06NM5SCATMA1 IQEH50NE2LM7ZCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 333 W 150 W
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Package PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55 degrees C to +175 degrees C
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL classification] —
Tape and Reel Packaging Yes (suffix SCATMA1) —
Product Family — OptiMOS 7 Power-Transistor
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Maximum Junction Temperature — +175 degrees C
Technology — OptiMOS 7 (Trench-Gate)
Qualification — Industrial grade per Infineon datasheet

Datasheets & Resources

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