IQDH35N03LM5SCATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan

Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQDH35N03LM5SCATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) —
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Paket PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C —
Level MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubung Kerja — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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