IQDH35N03LM5SCATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5SCATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQDH35N03LM5SCATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) —
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Kemasan PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C —
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubungan Operasi — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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