IQDH35N03LM5SCATMA1 vs IQDH29NE2LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IQDH29NE2LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH35N03LM5SCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Paket | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHTFN-9-U02 (WHTFN EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| Level MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Jumlah Pin | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |