IQE008N03LM5SCATMA1 vs IQE012N03LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE008N03LM5SCATMA1 dari Infineon dan IQE012N03LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE008N03LM5SCATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ, per Merlin listing) |
| Gate Drive Voltage | 10 V (recommended) | — |
| Paket | PG-WHSON-8 (Source-Down) | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) |
| Configuration | Single N-Channel | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Status RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) @ Ta | — | 34 A |
| Continuous Drain Current (ID) @ Tc | — | 224 A |
| Maximum RDS(on) @ VGS=10V | — | 1.15 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |