IQE012N03LM5CGATMA1 vs IQE008N03LM5CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQE012N03LM5CGATMA1 dari Infineon dan IQE008N03LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE012N03LM5CGATMA1 IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 ✓ Aktif
Infineon
IQE008N03LM5CGSCATMA1 IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon

IQE008N03LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE012N03LM5CGATMA1 IQE008N03LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID, Ta) 34 A —
Pulsed Drain Current (IDM, Tc) 224 A —
On-Resistance RDS(on), typ 1.20 mOhm —
Gate-Source Threshold VGS(th) 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
Technology / Process OptiMOS 5 trench —
Paket PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) PG-WHTFN-9 (WHTFN)
Tipe Mounting Surface Mount Surface Mount (top + bottom cooling)
Suhu Kerja -55 C to +150 C (TJ) —
Gate Drive (recommended) 10 V (logic-level compatible) —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) Max — 252 A (per channel, case-temperature limited)
On-Resistance (RDS(on)) Max — 0.85 mOhm at VGS = 10 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS maximum rating]
Gate Threshold Voltage (VGS(th)) — 2 V (typ)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Rentang Suhu Kerja — -55C to +150C (junction)
Technology — Trench MOSFET (OptiMOS 5)
Polarity — N-Channel
Jumlah Pin — 9 (WHTFN with exposed thermal pads)
Bebas Halogen — Yes (Infineon standard for OptiMOS 5)

Spek dan Sumber

IQE008N03LM5CGSCATMA1

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