IQE013N04LM6ATMA1 vs IQE008N03LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil IQE013N04LM6ATMA1 dari Infineon dan IQE008N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IQE013N04LM6ATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS N-channel trench MOSFET | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| Paket | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHSON-8 (Source-Down) |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55 °C to +150 °C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |