IQE013N04LM6ATMA1 vs IQE008N03LM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE013N04LM6ATMA1 disebabkan oleh Infineon dan IQE008N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE013N04LM6ATMA1 IQE008N03LM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET Trench MOSFET (N-Channel)
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 30 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) 2 V (typical)
Kemasan PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-WHSON-8 (Source-Down)
Gambaran Suhu Operasi -55 °C to +175 °C -55 °C to +150 °C
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Continuous Drain Current (ID) — 252 A
On-Resistance (RDS(on)) max — 0.85 mΩ at VGS = 10 V
Gate Drive Voltage — 10 V (recommended)
Configuration — Single N-Channel
Cooling Architecture — Source-Down, dual-side cooling
Aras MSL — [DATA_NEEDED: MSL rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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