IQE020N04LM6CGATMA1 vs IQE004NE1LM7CGATMA1 Perbandingan
Perbandingan bersamaan detil IQE020N04LM6CGATMA1 dari Infineon dan IQE004NE1LM7CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQE020N04LM6CGATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 7 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 15 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Paket | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TTFN-9-3 (surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Technology | OptiMOS 6, TrenchFET-class | N-Channel Trench Power MOSFET |
| Configuration | Single N-Channel, source-down | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 89 W |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Suhu Kerja | — | -55C to +150C (junction) |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |