IQE036N08NM6CGSCATMA1 vs IQDH35N03LM5CGATMA1 Perbandingan

Perbandingan bersamaan detil IQE036N08NM6CGSCATMA1 dari Infineon dan IQDH35N03LM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE036N08NM6CGSCATMA1 IQDH35N03LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Part Status Active —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TA 16.7 A —
Continuous Drain Current (ID) at TC 118 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 125 W —
Tipe Mounting Surface Mount Surface Mount
Paket / Case PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) —
Technology Trench MOSFET (OptiMOS 6) OptiMOS 5 trench MOSFET
Configuration Source Down, Center Gate, Dual-Side Cooling —
Rentang Suhu Kerja -55 C to +150 C (junction, per datasheet derating curves) -55 °C to +175 °C
Packing Tape and Reel (suffix ATMA1) —
Voltage Rating 60 V to 100 V category (80 V nominal) —
Status RoHS Compliant Compliant
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 0.35 mΩ (typical at VGS=10 V)
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Paket — PG-TTFN-9-U02 (PQFN 5x6 mm²)
Level MSL — 1
Bebas Halogen — Yes
Channel Type — N-Channel

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IQE036N08NM6CGSCATMA1

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