IQE036N08NM6CGSCATMA1 vs IQDH35N03LM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon dan IQDH35N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE036N08NM6CGSCATMA1 IQDH35N03LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Part Status Active —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TA 16.7 A —
Continuous Drain Current (ID) at TC 118 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 125 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) —
Technology Trench MOSFET (OptiMOS 6) OptiMOS 5 trench MOSFET
Configuration Source Down, Center Gate, Dual-Side Cooling —
Gambaran Suhu Operasi -55 C to +150 C (junction, per datasheet derating curves) -55 °C to +175 °C
Packing Tape and Reel (suffix ATMA1) —
Voltage Rating 60 V to 100 V category (80 V nominal) —
Status RoHS Compliant Compliant
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 0.35 mΩ (typical at VGS=10 V)
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Kemasan — PG-TTFN-9-U02 (PQFN 5x6 mm²)
Aras MSL — 1
Boson Bebas — Yes
Channel Type — N-Channel

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