IQE220N15NM5ATMA1 vs IPTC054N15NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQE220N15NM5ATMA1 dari Infineon dan IPTC054N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE220N15NM5ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| Konfigurasi Output | Single N-Channel | — |
| Paket | PG-TSON-8-5 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Tipe Mounting | Surface Mount | Surface Mount (top-side cooled) |
| Suhu Kerja | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 (IPT family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |