IQE220N15NM5ATMA1 vs IPTC054N15NM5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE220N15NM5ATMA1 tarafından Infineon ve IPTC054N15NM5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE220N15NM5ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| Çıkış Konfigürasyonu | Single N-Channel | — |
| Paket | PG-TSON-8-5 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Montaj Türü | Surface Mount | Surface Mount (top-side cooled) |
| İşletim Sıcaklığı | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 (IPT family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| İşletim Jant Sıcaklığı | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |