IQEH50NE2LM7UCGSCATMA1 vs IQD020N10NM5CGATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7UCGSCATMA1 dari Infineon dan IQD020N10NM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7UCGSCATMA1 IQD020N10NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at TA 54 A —
Continuous Drain Current (ID) at TC 422 A —
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Paket PG-WHTFN-9-1 (surface mount) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET OptiMOS™ 5 N-channel trench MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 26 A
Continuous Drain Current (ID) at TC=25°C — [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C — 273 A
Static Drain-Source On-Resistance RDS(on) max — 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 333 W
Rentang Suhu Kerja — -55°C to +175°C
Level MSL — [DATA_NEEDED: MSL rating from datasheet]
Status RoHS — Compliant
Qualification — Industrial grade (Infineon OptiMOS™ 5 family)

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