IQEH50NE2LM7ZCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQEH46NE2LM7UCGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 IQEH46NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel Single N-Channel
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Rentang Suhu Kerja -55 degrees C to +175 degrees C —
Paket PG-TTFN-9-3 PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) OptiMOS 7 (trench)
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TC — 440 A
Continuous Drain Current (ID) at TA — 57 A
Power Dissipation at TA — 2.5 W
Power Dissipation at TC — 150 W
Maximum On-Resistance (RDS(on)) — 0.46 mOhm
Gate Threshold Voltage (VGS(th)) — 2 V
Operating Mode — Enhancement-mode
Topology Suitability — Hard- and soft-switching

Spek dan Sumber

IQEH46NE2LM7UCGSCATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon