IQEH50NE2LM7ZCGATMA1 vs IQEH54NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQEH54NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 IQEH54NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Rentang Suhu Kerja -55 degrees C to +175 degrees C -55C to +150C (typical MOSFET range)
Paket PG-TTFN-9-3 PG-TTFN-9-3
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at Ta — 52 A
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical in nC]
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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