IR2104SPBF vs IRS2101STRPBF Perbandingan

Perbandingan bersamaan detil IR2104SPBF dari Infineon dan IRS2101STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2104SPBF IRS2101STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver —
Number of Drivers 2 (high-side + low-side) 2
Configuration High and Low Side —
Input Type Logic (non-inverting) —
Maximum Offset / Bootstrap Supply Voltage 600 V —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Output Source Current 130 mA typical —
Output Sink Current 270 mA typical —
Propagation Delay 680 ns typical —
Waktu naik 160 ns typical —
Waktu Menurun 60 ns typical —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V
Undervoltage Lockout Yes (VCC UVLO) Yes (VCC and VBS)
Deadtime Internally set —
Cross-Conduction Prevention Yes —
Rentang Suhu Kerja -40 C to +125 C —
Paket 8-pin SOIC 8-SOIC (SOIC-8)
Status RoHS Compliant (PBF suffix indicates lead-free) Compliant (PBF suffix)
Driver Type — High-Side, Low-Side (Half-Bridge)
Jumlah Output — 2-OUT
Konfigurasi Output — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Suhu Kerja — -40C to +125C
Tipe Mounting — Surface Mount
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

Spek dan Sumber

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