IR2104STRPBF vs IR2101STRPBF Perbandingan
Perbandingan bersamaan detil IR2104STRPBF dari Infineon dan IR2101STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IR2104STRPBF | IR2101STRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High-side and low-side referenced output channels | Half-Bridge (High-Side and Low-Side), Independent |
| Jumlah Output | 2 (high-side + low-side) | — |
| Offset Voltage (High-Side, Max) | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | 10 V to 20 V |
| Output Source Current (typ) | 0.21 A | — |
| Output Sink Current (typ) | 0.36 A | — |
| Rise Time (typ) | 100 ns | — |
| Fall Time (typ) | 50 ns | — |
| Propagation Delay (typ) | 680 ns | — |
| Turn-On Propagation Delay (typ) | 150 ns | — |
| Turn-Off Propagation Delay (typ) | 130 ns | — |
| Quiescent Current (VCC/VBS, typ) | 150 uA | — |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V logic | — |
| Shutdown Pin | Yes (active-low shutdown input) | — |
| Undervoltage Lockout | Yes (VCC and VBS) | — |
| Cross-Conduction Prevention | Yes (matched propagation delay) | — |
| dV/dt Immunity | Yes | — |
| Negative VS Transient Tolerance | Yes | — |
| Rentang Suhu Kerja | -40 C to +150 C | — |
| Paket | 8-SOIC (SOIC-8) | 8-SOIC (0.154 inch, 3.90 mm Width) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Number of Drivers | — | 2 |
| Driver Type | — | Non-Inverting |
| Maximum Offset Voltage | — | 600 V |
| Source Current (Typ.) | — | 210 mA |
| Sink Current (Typ.) | — | 360 mA |
| Propagation Delay (Typ.) | — | 160 ns |
| Rise Time (Typ.) | — | [DATA_NEEDED: rise time] |
| Fall Time (Typ.) | — | [DATA_NEEDED: fall time] |
| Logic Input Compatibility | — | 3.3 V / 5 V / 15 V CMOS/LSTTL |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Negative Transient Immunity on VS | — | Yes (dV/dt immune) |
| Suhu Kerja | — | -40 C to +125 C |
| Level MSL | — | MSL 3 |