IR2104STRPBF vs IR2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2104STRPBF sa pamamagitan ng Infineon at IR2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IR2104STRPBF IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IR2104STRPBF IR2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels Half-Bridge (High-Side and Low-Side), Independent
Bilang ng Outputs 2 (high-side + low-side) —
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic —
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Hanay ng Temperature na Operasyon -40 C to +150 C —
Packhaging 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Number of Drivers — 2
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Logic Input Compatibility — 3.3 V / 5 V / 15 V CMOS/LSTTL
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Temperature na Operasyon — -40 C to +125 C
Level ng MSL — MSL 3

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita