IR21531STRPBF vs IR2127STRPBF Perbandingan

Perbandingan bersamaan detil IR21531STRPBF dari Infineon dan IR2127STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21531STRPBF IR2127STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side
Driver Type High-side and Low-side, self-oscillating —
Jumlah Output 2 (high-side, low-side) 1
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
Waktu naik 80 ns 80 ns (typical)
Waktu Menurun 45 ns 60 ns (typical)
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) Non-Inverting
Suhu Kerja -40C to +125C —
Paket 8-pin SOIC (SO-8) 8-SOIC (3.90 mm body)
Tipe Mounting Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
Status RoHS Compliant (ROHS3) —
Supply Voltage Range — 12 V to 20 V
Output Voltage (Offset) — up to 600 V
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns (typical)
Rentang Suhu Kerja — -40C to +125C
Level MSL — MSL3 (per JEDEC J-STD-020)
Lead-Free / RoHS — Pb-free (PBF), RoHS compliant
dV/dt Immunity — Yes (high-side floating channel)
Integrated Current Sense — Yes (cycle-by-cycle comparator)

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