IRF4905LPBF vs IRF4905PBF Perbandingan

Perbandingan bersamaan detil IRF4905LPBF dari Infineon dan IRF4905PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF4905LPBF IRF4905PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Suhu Hubung Kerja -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Paket TO-262 (I2PAK), through-hole, 3-pin TO-220AB (through-hole)
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Tipe Mounting Through Hole Through Hole
Lead-Free / RoHS Yes (PbF suffix) Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated Yes —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -74 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — 120 nC
Rentang Suhu Kerja — -55 °C to +175 °C (junction)
Pin Configuration — Gate - Drain - Source (left to right)
Level MSL — 1 (not moisture-sensitive for TO-220)

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