IRF4905LPBF vs IRF4905PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905LPBF sa pamamagitan ng Infineon at IRF4905PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905LPBF IRF4905PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Temperature ng Junction na Operasyon -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Packhaging TO-262 (I2PAK), through-hole, 3-pin TO-220AB (through-hole)
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Uri ng Pagpapasok Through Hole Through Hole
Lead-Free / RoHS Yes (PbF suffix) Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated Yes —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -74 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — 120 nC
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (junction)
Pin Configuration — Gate - Drain - Source (left to right)
Level ng MSL — 1 (not moisture-sensitive for TO-220)

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