IRF4905STRRPBF vs IRF5305STRRPBF Perbandingan
Perbandingan bersamaan detil IRF4905STRRPBF dari Infineon dan IRF5305STRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF4905STRRPBF | IRF5305STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | -55C to +175C |
| Paket | D2PAK (TO-263-3) | D2PAK (TO-263) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Advanced Process) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Tipe Transistor | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |