IRF4905STRRPBF vs IRF5305STRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905STRRPBF disebabkan oleh Infineon dan IRF5305STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF4905STRRPBF | IRF5305STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55C to +175C |
| Kemasan | D2PAK (TO-263-3) | D2PAK (TO-263) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Advanced Process) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Jenis Transistor | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |