IRF7105TRPBF vs IRF7351TRPBF Perbandingan

Perbandingan bersamaan detil IRF7105TRPBF dari Infineon dan IRF7351TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7105TRPBF IRF7351TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) IR MOSFET (HEXFET trench)
Paket 8-SO (SOIC-8) 8-SO (SO-8 / SOIC-8) Surface Mount
Total Package Power Dissipation (Pd) 2 W —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: junction temperature range] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Jumlah Pin 8 —
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 8 A
On-Resistance RDS(on) max — 17.8 mOhm
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
Suhu Kerja — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
Status RoHS — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL Level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

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