IRF7205TRPBF vs IRF7319TRPBF Perbandingan

Perbandingan bersamaan detil IRF7205TRPBF dari Infineon dan IRF7319TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7205TRPBF IRF7319TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) IR MOSFET / Fifth Generation HEXFET
Drain-to-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
Dissipasi Listrik (TC=25°C) 2.5 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket SO-8 (8-SO) —
Tipe Mounting Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) Tape & Reel (TR suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Rentang Suhu Kerja — -55C to +150C (junction)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Configuration — N-Channel + P-Channel (complementary half-bridge)

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