IRF7319TRPBF vs STS5DNF60L Perbandingan
Perbandingan bersamaan detil IRF7319TRPBF dari Infineon dan STS5DNF60L dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRF7319TRPBF | STS5DNF60L |
|---|---|---|
| Merek | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | STripFET II trench N-channel |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | [DATA_NEEDED: operating temperature min/max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | Dual independent N-channel |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at 25 °C | — | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | — | 35 mΩ at V_GS = 10 V |
| On-Resistance R_DS(on) (max) | — | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) value] |
| Gate Charge Q_g | — | [DATA_NEEDED: Q_g total gate charge value] |
| Paket | — | SO-8 (8-SOIC, surface mount) |
| Power Dissipation P_D (per datasheet) | — | 2 W |
| Automotive Grade | — | Automotive-grade qualified |
| RoHS Compliance | — | Compliant |
| Avalanche Rating | — | 100% avalanche tested |
| Level MSL | — | [DATA_NEEDED: MSL rating] |