IRF7319TRPBF vs STS5DNF60L 比較

詳細並排比較 IRF7319TRPBF 由 Infineon 與 STS5DNF60L 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7319TRPBF STS5DNF60L
品牌 Infineon STMicroelectronics
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET STripFET II trench N-channel
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) [DATA_NEEDED: operating temperature min/max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) Dual independent N-channel
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at 25 °C — 5 A per channel
On-Resistance R_DS(on) (typ.) — 35 mΩ at V_GS = 10 V
On-Resistance R_DS(on) (max) — 45 mΩ at V_GS = 10 V, I_D = 2 A
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) value]
Gate Charge Q_g — [DATA_NEEDED: Q_g total gate charge value]
封裝 — SO-8 (8-SOIC, surface mount)
Power Dissipation P_D (per datasheet) — 2 W
Automotive Grade — Automotive-grade qualified
RoHS Compliance — Compliant
Avalanche Rating — 100% avalanche tested
MSL 等級 — [DATA_NEEDED: MSL rating]

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