IRF7341GTRPBF vs IRF7105TRPBF Perbandingan
Perbandingan bersamaan detil IRF7341GTRPBF dari Infineon dan IRF7105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7341GTRPBF | IRF7105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | — |
| Technology | IR HEXFET Planar MOSFET | HEXFET (IR MOSFET, fifth generation) |
| Paket | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Rentang Suhu Kerja | -55 C to +175 C | [DATA_NEEDED: junction temperature range] |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IRF7105 (HEXFET Fifth Generation) |
| Polarity / Configuration | — | N-Channel + P-Channel, dual MOSFET in one package |
| Drain-to-Source Voltage (Vds) | — | 25 V |
| Continuous Drain Current - N-channel (Id, N-ch) | — | 3.5 A |
| Continuous Drain Current - P-channel (Id, P-ch) | — | 2.3 A |
| Rds(on) Maximum | — | 100 mOhm |
| Total Package Power Dissipation (Pd) | — | 2 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Packaging Form | — | Tape & Reel (TR) |
| Lead-Free / RoHS Status | — | Pb-free (PBF suffix), RoHS compliant |
| Jumlah Pin | — | 8 |