IRF7341GTRPBF vs IRF7105TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7341GTRPBF sa pamamagitan ng Infineon at IRF7105TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7341GTRPBF IRF7105TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel —
Technology IR HEXFET Planar MOSFET HEXFET (IR MOSFET, fifth generation)
Packhaging 8-SO (SOIC-8) 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Hanay ng Temperature na Operasyon -55 C to +175 C [DATA_NEEDED: junction temperature range]
Tindminan RoHS Compliant —
Lead-Free Yes (PBF suffix) —
Manufacturer — Infineon Technologies
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Total Package Power Dissipation (Pd) — 2 W
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant
Bilang ng Pin — 8

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