IRF7341GTRPBF vs IRF7105TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7341GTRPBF disebabkan oleh Infineon dan IRF7105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7341GTRPBF | IRF7105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | — |
| Technology | IR HEXFET Planar MOSFET | HEXFET (IR MOSFET, fifth generation) |
| Kemasan | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Gambaran Suhu Operasi | -55 C to +175 C | [DATA_NEEDED: junction temperature range] |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | IRF7105 (HEXFET Fifth Generation) |
| Polarity / Configuration | — | N-Channel + P-Channel, dual MOSFET in one package |
| Drain-to-Source Voltage (Vds) | — | 25 V |
| Continuous Drain Current - N-channel (Id, N-ch) | — | 3.5 A |
| Continuous Drain Current - P-channel (Id, P-ch) | — | 2.3 A |
| Rds(on) Maximum | — | 100 mOhm |
| Total Package Power Dissipation (Pd) | — | 2 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Packaging Form | — | Tape & Reel (TR) |
| Lead-Free / RoHS Status | — | Pb-free (PBF suffix), RoHS compliant |
| Kiraan Pin | — | 8 |