IRF7341GTRPBF vs IRF7319TRPBF Perbandingan

Perbandingan bersamaan detil IRF7341GTRPBF dari Infineon dan IRF7319TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7341GTRPBF IRF7319TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel N-Channel + P-Channel (complementary half-bridge)
Technology IR HEXFET Planar MOSFET IR MOSFET / Fifth Generation HEXFET
Paket 8-SO (SOIC-8) —
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +175 C -55C to +150C (junction)
Status RoHS Compliant —
Lead-Free Yes (PBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Packaging — Tape & Reel (TR suffix)

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