IRF7341GTRPBF vs IRF7351TRPBF Perbandingan
Perbandingan bersamaan detil IRF7341GTRPBF dari Infineon dan IRF7351TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7341GTRPBF | IRF7351TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) | 5.1 A | 8 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | 2 W |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-Channel MOSFET (Half-Bridge) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET (HEXFET trench) |
| Paket | 8-SO (SOIC-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 24 nC |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| Status RoHS | Compliant | Compliant (PBF suffix = lead-free) |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Suhu Kerja | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Level MSL | — | [DATA_NEEDED: MSL Level] |