IRF7341GTRPBF vs IRF7351TRPBF 比較
詳細並排比較 IRF7341GTRPBF 由 Infineon 與 IRF7351TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7341GTRPBF | IRF7351TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) | 5.1 A | 8 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | 2 W |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-Channel MOSFET (Half-Bridge) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET (HEXFET trench) |
| 封裝 | 8-SO (SOIC-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 24 nC |
| 工作溫度範圍 | -55 C to +175 C | — |
| RoHS 狀態 | Compliant | Compliant (PBF suffix = lead-free) |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| 工作溫度 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| MSL 等級 | — | [DATA_NEEDED: MSL Level] |