IRF7341GTRPBF vs IRF7351TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7341GTRPBF sa pamamagitan ng Infineon at IRF7351TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7341GTRPBF | IRF7351TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) | 5.1 A | 8 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | 2 W |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-Channel MOSFET (Half-Bridge) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET (HEXFET trench) |
| Packhaging | 8-SO (SOIC-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 24 nC |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Tindminan RoHS | Compliant | Compliant (PBF suffix = lead-free) |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7351TRPBF |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Temperature na Operasyon | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |