IRF7854TRPBF vs IRF7389PBF Perbandingan

Perbandingan bersamaan detil IRF7854TRPBF dari Infineon dan IRF7389PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7854TRPBF IRF7389PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,48 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25°C 10 A —
Power Dissipation (PD) at Ta=25°C 2.5 W —
On-Resistance RDS(on) max at VGS=10V 13.4 mΩ —
Gate-Source Threshold Voltage VGS(th) max 4.9 V —
Total Gate Charge Qg 27 nC —
Paket SO-8 SO-8 (SOIC-8) surface mount
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (planar N-channel) Generation V HEXFET
Rentang Suhu Kerja -55°C to +150°C (TJ) [DATA_NEEDED: full operating temperature range]
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Qualification JEDEC industrial, Normal level —
Solder Process Reflow and wave-solderable —
Gate Drive Voltage (recommended) 10 V —
Configuration — N and P-Channel (complementary half-bridge)
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
Status RoHS — Compliant
Lead-Free — Yes
Bebas Halogen — Yes
Avalanche Rated — Yes (fully avalanche rated)

Spek dan Sumber

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