IRF7854TRPBF vs IRFH5300TRPBF Perbandingan
Perbandingan bersamaan detil IRF7854TRPBF dari Infineon dan IRFH5300TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7854TRPBF | IRFH5300TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,48 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | 1.4 mOhm |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | PQFN-8 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| Rentang Suhu Kerja | -55°C to +150°C (TJ) | -55C to +150C |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 40 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 50 nC |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |
| Status RoHS | — | Compliant |