IRFH5020TRPBF vs BSC014N04LSATMA1 Perbandingan

Perbandingan bersamaan detil IRFH5020TRPBF dari Infineon dan BSC014N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFH5020TRPBF BSC014N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide —
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Dissipasi Listrik (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Tipe Mounting Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Rentang Suhu Kerja -55 °C to +150 °C (TJ max) -55C to +175C
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Level MSL 1 (per industry standard for PQFN-8) 1 (unlimited)
Series — OptiMOS 5
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V
Paket — SuperSO8 (TDSON-8 FL) 5x6 mm
Technology — Trench (OptiMOS 5, thin-wafer)
Status RoHS — Compliant

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