IRFH5020TRPBF vs BSC014N04LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5020TRPBF disebabkan oleh Infineon dan BSC014N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH5020TRPBF BSC014N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide —
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Pembuangan Kuasa (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Jenis Pemasangan Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ max) -55C to +175C
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Aras MSL 1 (per industry standard for PQFN-8) 1 (unlimited)
Series — OptiMOS 5
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V
Kemasan — SuperSO8 (TDSON-8 FL) 5x6 mm
Technology — Trench (OptiMOS 5, thin-wafer)
Status RoHS — Compliant

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