IRFR024NTRPBF vs IRLL024NTRPBF Perbandingan
Perbandingan bersamaan detil IRFR024NTRPBF dari Infineon dan IRLL024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR024NTRPBF | IRLL024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | — |
| Pulsed Drain Current (IDM) | 60 A | 4.4 A |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | TO-252-3 (DPAK, SC-63), surface mount | SOT-223 (4-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| FET Type | — | MOSFET, Metal Oxide |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Total Gate Charge (Qg) | — | 10.4 nC |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Technology | — | HEXFET Power MOSFET |
| Status RoHS | — | Compliant |