IRFR024NTRPBF vs IRLL024NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR024NTRPBF disebabkan oleh Infineon dan IRLL024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR024NTRPBF | IRLL024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | — |
| Pulsed Drain Current (IDM) | 60 A | 4.4 A |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | TO-252-3 (DPAK, SC-63), surface mount | SOT-223 (4-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| FET Type | — | MOSFET, Metal Oxide |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Total Gate Charge (Qg) | — | 10.4 nC |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Technology | — | HEXFET Power MOSFET |
| Status RoHS | — | Compliant |