IRFR120NTRLPBF vs IRFL014NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR120NTRLPBF dari Infineon dan IRFL014NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR120NTRLPBF IRFL014NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology IR MOSFET (HEXFET) HEXFET (planar N-channel, fifth generation)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (PD) at TC=25C 48 W —
Rentang Suhu Hubung Kerja -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) —
Paket PG-TO252-3 (DPAK) SOT-223 (TO-261-4), 4-pin (3 + tab)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Finish Yes (Pb-free) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
Rentang Suhu Kerja — -55 C to +150 C (junction)
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Yes (dynamic dv/dt rated)
Lead-Free / RoHS — Yes / Compliant
Level MSL — Level 1 (per JEDEC J-STD-020)

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